ndt451an n-channel enhancement mode field effect transistor general description features ________________________________________________________________________________ absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ndt451an units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current - continuous (note 1a) 7.2 a - pulsed 25 p d maximum power dissipation (note 1a) 3 w (note 1b) 1.3 (note 1c) 1.1 t j ,t stg operating and storage temperature range -65 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 42 c/w r q jc thermal resistance, junction-to-case (note 1) 12 c/w ndt451an rev. d1 power sot n-channel enhancement mode power field effect transistors are produced using fairchild's proprietary, high cell density, dmos technology. this very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as dc motor control and dc/dc conversion where fast switching, low in-line power loss, and resistance to transients are needed. 7.2 a, 3 0v. r ds(on ) = 0.035 w @ v gs = 10v r ds(on ) = 0.05 w @ v gs = 4.5v . high density cell design for extremely low r ds(on) . high power and current handling capability in a widely used surface mount package. d d s g @ 2009 fairchild semiconductor corporation february 2009
electrical characteristics (t a = 25c unless otherwise noted) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a t j = 55c 10 a i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2 ) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.6 3 v t j = 125c 0.7 1.2 2.2 r ds(on) static drain-source on-resistance v gs = 10 v, i d = 7.2 a 0.03 0.035 w t j = 125c 0.042 0.063 v gs = 4.5 v, i d = 6.0 a 0.042 0.05 t j = 125c 0.058 0.09 i d (on) on-state drain current v gs = 10 v, v ds = 5 v 25 a v gs = 4.5 v, v ds = 5 v 15 g fs forward transconductance v ds = 10 v, i d = 7.2 a 11 s dynamic characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 720 pf c oss output capacitance 370 pf c rss reverse transfer capacitance 250 pf switching characteristics (note 2 ) t d(on) turn - on delay time v dd = 10 v, i d = 1 a, v gen = 1 0 v, r gen = 6 w 12 20 ns t r turn - on rise time 13 30 ns t d(off) turn - off delay time 29 50 ns t f turn - off fall time 10 20 ns q g total gate charge v ds = 10 v, i d = 7.2 a, v gs = 10 v 19 30 nc q gs gate-source charge 2.3 nc q gd gate-drain charge 5.5 nc ndt451an rev. d1
electrical characteristics (t a = 25c unless otherwise noted) symbol parameter conditions min typ max units drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 2.3 a v sd drain-source diode forward voltage v gs = 0 v, i s = 7.2 a (note 2 ) 0.9 1.3 v t rr reverse recovery time v gs = 0 v, i f = 1.2 5 a, di f /dt = 100 a/s 100 ns notes: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. p d ( t ) = t j - t a r q j a ( t ) = t j - t a r q j c + r q c a ( t ) = i d 2 ( t ) r d s ( o n ) t j typical r q ja using the board layouts shown below on 4.5"x5" fr-4 pcb in a still air environment : a. 42 o c/w when mounted on a 1 in 2 pad of 2oz copper. b. 95 o c/w when mounted on a 0.066 in 2 pad of 2oz copper. c. 110 o c/w when mounted on a 0.0123 in 2 pad of 2oz copper. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. ndt451an rev. d1 1a 1b 1c
ndt451an rev. d1 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 v , drain-source voltage (v) i , drain-source current (a) ds d v =10v gs 6.0 4.0 3.5 3.0 5.0 4.5 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance j v =10v gs i = 7.2a d r , normalized ds(on) -50 -25 0 25 50 75 100 125 150 0.6 0.7 0.8 0.9 1 1.1 1.2 t , junction temperature (c) gate-source threshold voltage j i = 250a d v = v ds gs v , normalized th 0 5 10 15 20 25 0.5 1 1.5 2 2.5 3 i , drain current (a) drain-source on-resistance r , normalized ds(on) v = 3.0v gs d 4.0 10 6.0 4.5 5.0 3.5 0 5 10 15 20 25 0.5 0.75 1 1.25 1.5 1.75 2 i , drain current (a) drain-source on-resistance d v = 10v gs t = 125c j 25c -55c r , normalized ds(on) typical electrical characteristics figure 1. on-region characteristics. figure 2. on-resistance variation wit h gate voltage and drain current. figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with drain current and temperature. figure 5. transfer characteristics. figure 6. gate threshold variation with temperature. 1 2 3 4 5 6 0 5 10 15 20 25 v , gate to source voltage (v) i , drain current (a) v = 10v ds gs d t = -55c j 25c 125c
ndt451an rev. d1 -50 -25 0 25 50 75 100 125 150 0.9 0.95 1 1.05 1.1 t , junction temperature (c) drain-source breakdown voltage i = 250a d bv , normalized dss j 0.2 0.4 0.6 0.8 1 1.2 1.4 0.001 0.01 0.1 1 10 25 v , body diode forward voltage (v) i , reverse drain current (a) t = 125c j 25c -55c v =0v gs sd s 0 5 10 15 20 25 0 2 4 6 8 10 q , gate charge (nc) v , gate-source voltage (v) g gs i = 7.2a d v = 5v ds 10v 20v 0.1 0.2 0.5 1 2 5 10 20 30 100 200 500 1000 1500 2000 v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0v gs c oss c rss figure 7. breakdown voltage variation with temperature. figure 8. body diode forward voltage variation with current and temperature . figure 9. capacitance characteristics. figure 10. gate charge characteristics. typical electrical characteristics 0 5 10 15 20 25 0 4 8 12 16 20 i , drain current (a) g , transconductance (siemens) t = -55c j d fs v = 10v ds 125c 25c figure 11. transconductance variation with drain current and temperature.
ndt451an rev. d1 typical thermal characteristics 0 0.2 0.4 0.6 0.8 1 3 4 5 6 7 8 2oz copper mounting pad area (in ) i , steady-state drain current (a) 2 1c 1b 1a 4.5"x5" fr-4 board t = 25 c still air v = 10v a o gs d figure 13 . maximum steady-state drain current versus copper mounting pad area. 0.1 0.2 0.5 1 2 5 10 30 50 0.01 0.05 0.1 0.2 0.5 1 5 10 30 v , drain-source voltage (v) i , drain current (a) ds d 1s 100ms 10s 10ms rds(on) limit dc 1ms v = 10v single pulse r = see note 1c t = 25c gs a q ja 100us figure 14 . maximum safe operating area. figure 15 . transient thermal response curve . note: thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. 0 0.2 0.4 0.6 0.8 1 0.5 1 1.5 2 2.5 3 3.5 2oz copper mounting pad area (in ) steady-state power dissipation (w) 2 1c 1b 1a 4.5"x5" fr-4 board t = 25 c still air a o figure 12 . sot-223 maximum steady-state power dissipation versus copper mounting pad area. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t / t 1 2 r (t) = r(t) * r r = see note 1 c q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2
rev. i38 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life su pport device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product de velopment. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supp lementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semicond uctor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy . fa ir child?s anti-counterfeiting policy is also stated on our external website, www. f airchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fa ir child strongly encourages customers to purchase fa ir child parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality st andards for handing and storage and provide access to fa ir child?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fa ir child is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. ndt451an re v. d 1 ndt451an re v. d 1 ndt451an re v. d 1
|
